March 26, 2018
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.
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Toshiba: A dual MOSFET "SSM6N813R" with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs. (Photo: Business Wire)
A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.
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About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.
Our 19,000 employees around the world share a determination to maximize the value of our products, and emphasize close collaboration with customers to promote co-creation of value and new markets. We look forward to building on annual sales now surpassing 700-billion yen (US$6 billion) and to contributing to a better future for people everywhere.
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