November 13, 2018
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced a new 130nm manufacturing process node based FFSA™ (Fit Fast Structured Array), an innovative custom SoC development platform featuring high performance, low cost and low power consumption.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20181112005853/en/
Toshiba: 130nm FFSA(TM) development platform featuring high performance, low power and low cost structured array.(Artist's impression)(Graphic: Business Wire)
Toshiba provides ASIC (Application Specific IC) and FFSA™ platforms that suit the customer's business environment and requirements, that also deliver efficient solutions for custom SoC development. FFSA™ devices use a silicon-based master slice which is common in combination with upper metal layers that are reserved for customization. By customizing only a few masks, FFSA™ offers much lower NRE costs than individual ASIC development. It also enables significant reductions in development cost and provides samples and mass-production in a short period of time than for conventional ASIC’s. Additionally, FFSA™ enables higher performance and lower power consumption than FPGA (Field Programmable Gate Array) using ASIC design methodology and its library. 
The 130nm process series joins Toshiba’s current 28nm, 40nm, and 65nm process portfolio making FFSA™ a suitable option for the growing industrial equipment market.
The 130nm FFSA™ devices designed on the platform will be manufactured by Japan Semiconductor, a subsidiary of Toshiba Electronic Devices & Storage Corporation with a long and proven history of expertise in manufacturing ASIC, ASSP and microcomputers. This will ensure long-term supply and meet the needs of customer business continuity plans.
The new series deliver the performance and integration needed for industrial apparatus, communication facilities, OA equipment and consumer products where steady market expansion is expected.
|The maximum gate number||
|Maximum SRAM capacity||664Kbit||19Mbit||30Mbit||207Mbit|
|Maximum transceiver speed||–||–||12.5Gbps||28Gbps|
|Number of maximum transceiver lanes||–||–||14||64|
|Number of maximum I/O pins||337||1110||720||928|
 Toshiba in-house comparisons of conventional FPGA products.
 The number of available gates is a guideline and will vary by application.
* FFSA™is a trademark of Toshiba Electronic Devices & Storage Corporation.
* All other company names, product names and service names may be trademarks of their respective companies.
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Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.
Our 22,000 employees around the world share a determination to maximize the value of our products, and emphasize close collaboration with customers to promote co-creation of value and new markets. We look forward to building on annual sales now surpassing 800-billion yen (US$7 billion) and to contributing to a better future for people everywhere.
Find out more about us at https://toshiba.semicon-storage.com/ap-en/top.html